Document
PD - 95021
IRF7205PbF
Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S
1 2 3 4 8 7
A D D D D
S
S G
VDSS = -30V RDS(on) = 0.070Ω ID = -4.6A
6 5
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
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SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-4.6 -3.7 -15 2.5 0.020 ± 20 -3.0 -55 to + 150
Units
A W W/°C V V/nS °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
50
Units
°C/W 2/18/04
IRF7205PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) V GS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. -30 -1.0
Typ. Max. Units Conditions V VGS = 0V, ID = -250µA -0.024 V/°C Reference to 25°C, ID = -1mA 0.070 VGS = -10V, I D = -4.6A Ω 0.130 VGS = -4.5V, ID = -2.0A -3.0 V VDS = VGS, I D = -250µA 6.6 S VDS = -15V, ID = -4.6A -1.0 VDS = -24V, VGS = 0V µA -5.0 VDS = -15V, VGS = 0V, TJ = 70 °C -100 VGS = -20V nA 100 VGS = 20V 27 40 ID = -4.6A 5.2 nC VDS = -15V 7.5 VGS = -10V 14 30 VDD = -15V 21 60 ID = -1.0A ns 97 150 RG = 6.0Ω 71 100 RD = 10Ω.