Hyperfast-2 Diode. FFP08H60S Datasheet

FFP08H60S Diode. Datasheet pdf. Equivalent

FFP08H60S Datasheet
Recommendation FFP08H60S Datasheet
Part FFP08H60S
Description 8A 600V Hyperfast-2 Diode
Feature FFP08H60S; FFP08H60S — Hyperfast II Diode October 2018 FFP08H60S 8 A, 600 V, Hyperfast II Diode Features • H.
Manufacture Fairchild Semiconductor
Datasheet
Download FFP08H60S Datasheet





Fairchild Semiconductor FFP08H60S
October 2018
FFP08H60S
8 A, 600 V, Hyperfast II Diode
Features
• Hyperfast Recovery trr = 45 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Free-Wheeling Diode for Motor Application
Pin Assignments
Description
The FFP08H60S is a hyperfast II diode and silicon nitride pas-
sivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping diodes
in a variety of switching power supplies and other power switch-
ing applications. Its low stored charge and hyperfast soft recov-
ery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
TO-220-2L
1. Cathode
2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 105 C
Operating Junction and Storage Temperature
Ratings
600
600
600
8
60
- 65 to +175
Unit
V
V
V
A
A
C
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RJC
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
2.5
Unit
C/W
Package Marking and Ordering Information
Part Number
FFP08H60STU
Top Mark
F08H60S
Package
TO-220-2L
Packing Method Reel Size Tape Width Quantity
Tube
N/A N/A 50
©2009 Fairchild Semiconductor Corporation
FFP08H60S Rev. 1
1
www.fairchildsemi.com



Fairchild Semiconductor FFP08H60S
Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
VF1
IR1
trr
ta
tb
Qrr
WAVL
Conditions
IF = 8 A
IF = 8 A
VR = 600 V
VR = 600 V
IF =1 A, diF/dt = 100 A/s, VR = 30 V
IF =8 A, diF/dt = 100 A/s, VR = 390 V
IF =8 A, diF/dt = 100 A/s, VR = 390 V
Avalanche Energy (L = 40 mH)
Notes:
1. Pulse : Test Pulse width = 300s, Duty Cycle = 2%
Test Circuit and Waveforms
TC = 25 C
TC = 125 C
TC = 25 C
TC = 125 C
TC = 25 C
TC = 25 C
TC = 25 C
TC = 25 C
TC = 25 C
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
15
16
18.6
-
Max.
2.1
1.7
100
200
35
45
-
-
-
-
Unit
V
V
A
A
ns
ns
ns
ns
nC
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2009 Fairchild Semiconductor Corporation
FFP08H60S Rev. 1
2
www.fairchildsemi.com



Fairchild Semiconductor FFP08H60S
Typical Performance Characteristics TC = 25°C unless otherwise noted
Figure 3. Typical Forward Voltage Drop
100
Figure 4. Typical Reverse Current
100
TC=100oC
10
T =150oC
C
1
T =25oC
C
10
TC=125oC
1
0.1
TC=25oC
0.01
0.1
012345
FORWARD VOLTAGE, VF [V]
Figure 5. Typical Junction Capacitance
80
f=1MHz
60
40
20
0
1 10 100
REVERSE VOLTAGE, VR [V]
Figure 7. Typical Reverse Recovery Current
14
IF=8A
12
10
8
6 TC=125oC
4
TC=25oC
2
0
100 200 300 400 500 600
diF/dt [A/s]
1E-3
0
100 200 300 400 500
REVERSE VOLTAGE, VR [V]
600
Figure 6. Typical Reverse Recovery Time
100
90 IF=8A
80
70
60 TC=125oC
50
40
30 TC=25oC
20
10
100
200 300
diF/dt [A/s]
400 500 600
Figure 8. Forward Current Deration Curve
10
8
6
DC
4
2
0
80 90 100 110 120 130 140 150
CASETEMPERATURE, TC [oC]
©2009 Fairchild Semiconductor Corporation
FFP08H60S Rev. 1
3
www.fairchildsemi.com





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