FFP08H60S — Hyperfast II Diode
October 2018
FFP08H60S 8 A, 600 V, Hyperfast II Diode
Features
• Hyperfast Recovery tr...
FFP08H60S — Hyperfast II Diode
October 2018
FFP08H60S 8 A, 600 V, Hyperfast II Diode
Features
Hyperfast Recovery trr = 45 ns (@ IF = 8 A) Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated RoHS Compliant
Applications
General Purpose SMPS, Power Switching Circuits Free-Wheeling Diode for Motor Application
Pin Assignments
Description
The FFP08H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching
transistors.
TO-220-2L
1. Cathode
2. Anode
1 1. Cathode
2 2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM VRWM VR IF(AV) IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
@ TC = 105 C
Operating Junction and Storage Temperature
Ratings
600 600 600
8 60
- 65 to +175
Unit
V V V A A
C
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol RJC
Parameter Maximum Thermal Resistance, Junction to Case
Max. 2.5
Unit C/W
Package Marking and Ordering Informati...