FQA8N80C 800V N-Channel MOSFET
September 2006
QFET
FQA8N80C
800V N-Channel MOSFET
Features
• • • • • • 8.4A, 800V, RDS...
FQA8N80C 800V N-Channel MOSFET
September 2006
QFET
FQA8N80C
800V N-Channel MOSFET
Features
8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 13pF) Fast switching 100% avalanche tested Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G
TO-3P
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Parameter
FQA8N80C
800 8.4 5.3 33.6 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
850 8.4 22 4.0 220 1.75 -55 to +150 300
Thermal Characteristics
Sy...