FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • –4.6 A, –20 V RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 60 mΩ @ VGS = –2.5 V RDS(ON) = 160 mΩ @ VGS = –1.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.85 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability. S Applications • Battery management • Load switch • Battery protection GATE G D Bottom Top TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –4.6 –10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) 72 2 °C/W Package Marking and Ordering Information Device Marking D Device FDZ291P Reel Size 13” Tape width 8mm Quantity 10000 units ©2006 Fairchild Semiconductor Corporation FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Electrical Characteristics T Symbol BVDSS ∆BVDSS ∆T J IDSS IGSS VGS(th) ∆VGS(th) ∆T J RDS(on) A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min Typ Max Units –20 –12 –1 ±100 –0.4 –0.7 2 31 43 85 42 –10 16 1010 160 80 –1.0 V mV/°C µA nA V mV/°C 40 60 160 55 mΩ Off Characteristics ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = ±8 V, VGS = 0 V VDS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –4.6 A VGS = –2.5 V, ID = –3.6 A VGS = –1.5 V, ID = –1.0 A VGS = –4.5 V, ID = –4.6 A, TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –4.6 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) A S pF pF pF 19 18 58 29 13 ns ns ns ns nC nC nC –1.4 –0.7 17 5 –1.2 A V ns nC Dynamic Characteristics VDS = –10 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 11 9 36 16 VDS = –10V, VGS = –4.5 V ID = –4.6 A, 9 1.6 1.9 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0V, IS = –1.4 A (Note 2) Voltage Diode Reverse Recovery Time IF = –4.6 A, dIF/dt = 100A/µs Diode Reverse Recovery Charge Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 72°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 10 3 VGS = -4.5V -3.5V -2.5V -3.0V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.2 1.8 1.4 1 0.6 0 VGS = -1.5V -ID, DRAIN CURRENT (A) 8 6 -1.5V 4 -2.0V -2.5V -3.0V -3.5V -4.5V 2 0 0 0.25 0.5 0.75 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.25 1.5 2 4 6 -ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 ID = -4.6A VGS = -4.5V ID = -2.3 A 0.12 0.1 0.08 TA = 125oC 0.06 TA = 25oC 0.04 0.02 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V -ID, DRAIN CURRENT (A) 8 10 1 0.1 0.01 0.001 0.0001 6 4 TA = 125oC 25oC -55oC TA = 125oC -55oC 2 25oC 0 0.5 0.75 1 1.25 1.5 1.75 -VGS, GATE TO SOURCE VOLTAGE (V) 2 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.6A 4 VDS = -5V 3 -10V 2 -15V 1500 f = 1MHz VGS = 0 V Ciss 1200 CAPACITANCE (pF) 900 600 Coss 1 300 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 20 Figure 8. Capacitance Characteristics. SINGLE PULSE RθJA = 157°C/W TA = 25°C -ID, DRAIN CURRENT (A) 10 1ms 10ms 100µs 15 1 10s DC VGS = -4.5V SINGLE PULSE RθJA = 157oC/W TA = 25oC 1s 100ms 10 0.1 5 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA = 157 ° C/W P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout FDZ291P Rev. C2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ DISCLAIMER ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains f FDZ291P MOSFET Datasheet pdf - BGA MOSFET. Equivalent, Catalog

BGA MOSFET. FDZ291P Datasheet

FDZ291P MOSFET. Datasheet pdf. Equivalent

FDZ291P Datasheet
Recommendation FDZ291P Datasheet
Part FDZ291P
Description P-Channel 1.5 V Specified PowerTrench BGA MOSFET
Feature FDZ291P; FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.5 V Sp.
Manufacture Fairchild Semiconductor
Datasheet
Download FDZ291P Datasheet





Fairchild Semiconductor FDZ291P
February 2006
FDZ291P
P-Channel 1.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 1.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
Battery management
Load switch
Battery protection
Features
–4.6 A, –20 V
RDS(ON) = 40 m@ VGS = –4.5 V
RDS(ON) = 60 m@ VGS = –2.5 V
RDS(ON) = 160 m@ VGS = –1.5 V
Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Qg x RDS(ON) figure-of-merit
High power and current handling capability.
GATE
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
D
FDZ291P
13”
D
Ratings
–20
±8
–4.6
–10
1.7
–55 to +150
72
2
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
10000 units
©2006 Fairchild Semiconductor Corporation
FDZ291P Rev. C2 (W)



Fairchild Semiconductor FDZ291P
Electrical CharacteristicsTA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage.
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = ±8 V,
VGS = 0 V
VDS = 0 V
–20
–12
V
mV/°C
–1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.4 –0.7 –1.0
V
2 mV/°C
VGS = –4.5 V, ID = –4.6 A
VGS = –2.5 V, ID = –3.6 A
VGS = –1.5 V, ID = –1.0 A
VGS = –4.5 V, ID = –4.6 A, TJ=125°C
31 40
43 60
m
85 160
42 55
VGS = –4.5 V, VDS = –5 V
–10
A
VDS = –5 V,
ID = –4.6 A
16 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1010
160
80
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
VDS = –10V,
VGS = –4.5 V
ID = –4.6 A,
11 19
9 18
36 58
16 29
9 13
1.6
1.9
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0V, IS = –1.4 A (Note 2)
trr
Diode Reverse Recovery Time
IF = –4.6 A, dIF/dt = 100A/µs
Qrr Diode Reverse Recovery Charge
–1.4
–0.7 –1.2
17
5
A
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 72°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 157°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ291P Rev. C2 (W)



Fairchild Semiconductor FDZ291P
Typical Characteristics
10
VGS = -4.5V
8 -3.5V
6
4
-2.0V
-2.5V
-3.0V
-1.5V
2
0
0 0.25 0.5 0.75 1 1.25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
3
VGS = -1.5V
2.6
2.2
1.8
-2.0V
1.4 -2.5V
-3.0V
-3.5V
1 -4.5V
0.6
0
2 -ID, DR4AIN CURRE6NT (A) 8
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.4
ID = -4.6A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
TJ,
25
JUNCTION
50 75
TEMPERATURE
(1o0C0)
125
150
Figure 3. On-Resistance Variation with
Temperature.
0.14
ID = -2.3 A
0.12
0.1
0.08
0.06
0.04
TA = 25oC
TA = 125oC
0.02
0
2468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
8
6
4
2
0
0.5
TA = 125oC
-55oC
25oC
0.75 1 1.25 1.5 1.75
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
0.001
0.0001
0
-55oC
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ291P Rev. C2 (W)





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)