P-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Feb 2006
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA ...
Description
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Feb 2006
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on).
Features
–4.6 A, –20 V rDS(on) = 46 mΩ @ VGS = –4.5 V rDS(on) = 72 mΩ @ VGS = –2.5 V
Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 Ultra-thin package: less than 0.85 mm height when mounted to PCB Outstanding thermal transfer characteristics: 4 times better than SSOT-6 Ultra-low Qg x rDS(on) figure-of-merit High power and current handling capability.
S
Applications
Battery management Load switch Battery protection
G AT E
G
D
Bottom
Top
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
–20 ±12
(Note 1a)
Units
V V A W °C
–4.6 –10 1.7 –55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a...
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