BGA MOSFET. FDZ293P Datasheet

FDZ293P MOSFET. Datasheet pdf. Equivalent

FDZ293P Datasheet
Recommendation FDZ293P Datasheet
Part FDZ293P
Description P-Channel 2.5 V Specified PowerTrench BGA MOSFET
Feature FDZ293P; FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Feb 2006 FDZ293P P-Channel 2.5 V Specifi.
Manufacture Fairchild Semiconductor
Datasheet
Download FDZ293P Datasheet





Fairchild Semiconductor FDZ293P
Feb 2006
FDZ293P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ293P minimizes both PCB space
and rDS(on). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low rDS(on).
Applications
Battery management
Load switch
Battery protection
G AT E
Features
–4.6 A, –20 V
rDS(on) = 46 m@ VGS = –4.5 V
rDS(on) = 72 m@ VGS = –2.5 V
Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Qg x rDS(on) figure-of-merit
High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current – Continuous
(Note 1a)
– Pulsed
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDZ293P
13”
©2005 Fairchild Semiconductor Corporation
D
Ratings
–20
±12
–4.6
–10
1.7
–55 to +150
72
2
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
10000 units
FDZ293P Rev. D (W)



Fairchild Semiconductor FDZ293P
Electrical CharacteristicsTA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage.
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = ±12 V,
VGS = 0 V
VDS = 0 V
–20
–13
V
mV/°C
–1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.6 –0.8
3
VGS = –4.5 V, ID = –4.6 A,
VGS = –2.5 V, ID = –3.6A,
VGS = –4.5 V, ID = –4.6 A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –4.6 A
–10
36
58
47
13
–1.5
46
72
65
V
mV/°C
m
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
754 pF
167 pF
92 pF
6
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
VDS = –10V,
VGS = –4.5 V
ID = –4.6 A,
11 20
10 20
22 35
17 31
7.5 11
1.5
2.0
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.4 A (Note 2)
trr
Qrr
Notes:
Diode Reverse Recovery Time IF = –4.6 A,
Diode Reverse Recovery Charge diF/dt = 100 A/µs
–1.4
–0.7 –1.2
17
5
A
V
nS
nC
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 72°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 157°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ293P Rev. D (W)



Fairchild Semiconductor FDZ293P
Typical Characteristics
10
VGS = -4.5V
-3.5V
8
6
-3.0V
-2.5V
-2.0V
4
2
0
0 0.5 1
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
2.6
2.4
VGS = -2.0V
2.2
2
1.8
1.6 -2.5V
1.4 -3.0V
1.2 -3.5V
1
0.8
0
246
-ID, DRAIN CURRENT (A)
-4.5V
8
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.4
ID = -4.6A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.18
ID = -2.3 A
0.15
0.12
0.09
0.06
0.03
1.5
TA = 125oC
TA = 25oC
2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
8
6
4
2
0
0.5
TA = 125oC
25oC
-55oC
1 1.5 2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics.
10
VGS = 0V
1
TA = 125oC
0.1
0.01
0.001
25oC
-55oC
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ293P Rev. D (W)





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