IRF7807D1PBF

PD- 95208 IRF7807D1PbF FETKY™ MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Lead-Free Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent„ Thermal Resistance Parameter Maximum Junction-to-Ambientƒ 25°C 70°C 25°C 70°C TJ, TSTG IF (AV) 25°C 70°C IDM PD Symbol VDS VGS ID Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.5 2.2 –55 to 150 Max. 50 °C Units °C/W W A A Units V A/S A/S A/S G 1 2 3 4 8 7 6 K/D K/D K/D K/D 5 SO-8 Top View Device Features (Max Values) IR...