IRFS4410PbF

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G S HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ. max. ID 100V 8.0m: 10m: 88A S D G TO-220AB IRFB4410PbF S D G D2Pak IRFS4410PbF S D G TO-262 IRFSL4410PbF Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d ™l 63™l 88 380 200 1.3 Max. Units A Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw l l W W/°C V V/ns °C f ± 20 19 -55 to + 175 300 10lb in (1.1N m) 220 See Fig. 14, 15, 16a, 16b x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ù e mJ A mJ Repetitive Avalanche Energy g Thermal Resistance Symbol RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak k Parameter Typ. ––– 0.50 ––...