HEXFET Power MOSFET
PD - 95707E
IRFB4410PbF IRFS4410PbF IRFSL4410PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uni...
Description
PD - 95707E
IRFB4410PbF IRFS4410PbF IRFSL4410PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G S
HEXFET® Power MOSFET
D
Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
VDSS RDS(on) typ. max. ID
100V 8.0m: 10m: 88A
S D G
TO-220AB IRFB4410PbF
S D G
D2Pak IRFS4410PbF
S D G
TO-262 IRFSL4410PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
d
l 63l
88 380 200 1.3
Max.
Units
A
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
l l
W W/°C V V/ns °C
f
± 20 19 -55 to + 175 300 10lb in (1.1N m) 220 See Fig. 14, 15, 16a, 16b
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current
Ã
e
mJ A mJ
Repetitive Avalanche Energy
g
Thermal Resistance
Symbol
RθJC RθCS RθJA RθJA Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak
k
Parameter
Typ.
––– 0.50 ––...
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