IRFB4410

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96902C IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET D VDSS 100V :RDS(on) typ. 8.0m :G max. 10m S ID 96A S GD TO-220AB IRFB4410 D S G D2Pak IRFS4410 S GD TO-262 IRFSL4410 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak www.irf.com Max. 96™ 68™ 380 250 1.6 ± 20 19 -55 to + 175 300 x x10lb in (1.1N m) 220 See Fig. 14, 15, 16a, 16b Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 Units A W W/°C V V/ns °C mJ A ...