IRFBC40APBF

SMPS MOSFET PD - 94986 IRFBC40APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) VDSS 600V Rds(on) max 1.2Ω ID 6.2A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 6.2 3.9 25 125 1.0 ± 30 6.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Typical SMPS Topologies: l Single Transistor Forward Notes  through … are on page 8 www.irf.com 1 2/5/04 IRFBC40APbF V(BR)DSS Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– Typ. ––– 0.66 ––...