Document
PD - 97201
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFI4229PbF
Key Parameters
250 300 38 32 150
D
VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max
D
V V m: A °C
G
G
D
S
S
TO-220AB Full-Pak D S
G
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) Typ. ––– ––– Max. 2.73 65 N Units °C/W
Max.
±30 19 12 72 32 46 18 0.37 -40 to + 150
Units
V A
W W/°C °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case f Junction-to-Ambient f
Notes through
are on page 8
www.irf.com
1
04/07/06
IRFI4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
250 ––– ––– 3.0 ––– ––– ––– ––– ––– 26 ––– ––– 100 ––– –––
Typ. Max. Units
––– 340 38 ––– -12 ––– ––– ––– ––– ––– 73 24 ––– 770 1380 4480 400 100 270 4.5 7.5 ––– ––– 46 5.0 ––– 20 250 100 -100 ––– 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ S nC nA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 11A e V mV/°C µA VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 25V, ID = 11A VDD = 125V, ID = 11A, VGS = 10Ve VDD = 20.