HEXFET Power MOSFET
PD - 97036A
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recove...
Description
PD - 97036A
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFI4227PbF
Key Parameters
200 240 21 47 150
D
D
VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max
V V m: A °C
G
G
D
S
S
TO-220AB Full-Pak D S
G
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Cu...
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