Document
PD - 95316
IRFL1006PbF
HEXFET® Power MOSFET
Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
D
VDSS = 60V RDS(on) = 0.22Ω
G S
ID = 1.6A
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy * Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
2.3 1.6 1.3 6.4 2.1 1.0 8.3 ± 20 54 1.6 0.1 5.0 -55 to + 150
Units
A
W W
mW/°C
V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90 50
Max.
120 60
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
05/26/04
IRFL1006PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions 60 ––– ––– V VGS = 0V, ID = 250µA ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.22 Ω VGS = 10V, ID = 1.6A 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 3.0 ––– ––– S VDS = 25V, ID = 1.6A ––– ––– 25 VDS = 60V, VGS = 0V µA ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 8.0 ID = 1..