IRFPS29N60L

PD - 94622 SMPS MOSFET IRFPS29N60L HEXFET® Power MOSFET Applications Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 175mΩ 600V 130ns 29A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise immunity . Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 29 18 110 480 3.8 ±30 12 -55 to + 150 300 (1.6mm from case ) 1.1(10) Nm (lbfin) W W/°C V V/ns °C Units A ™ VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 130 240 630 9.4 29 A 110 1.5 190 360 950 14 V ns Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 29A, VGS = 0V TJ = 25°C, IF = 29A TJ = 125°C, di/dt = 100A/µs Ãc Diode F...