IRFPS40N50L

PD- 93923B SMPS MOSFET IRFPS40N50L Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.087Ω 46A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low Trr and Soft Diode Recovery l High Performance Optimised Anti-parallel Diode SUPER TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage dv/dtPeak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Max. 46 29 180 540 4.3 ± 30 25 -55 to + 150 300 Units A W W/°C V V/ns °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton l Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units Conditions D ––– ––– 46 MOSFET symbol showing the A G ––– ––– 180 integral reverse S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 46A, VGS = 0V „ ––– 170 250 TJ = 25°C IF = 46A ns ––– 220 330 TJ = 125°...