HEXFET Power MOSFET
PD - 95034A
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele...
Description
PD - 95034A
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on)
l l l
IRFR3704PbF IRFU3704PbF
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
9.5mΩ
ID
75A
Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3704 I-Pak IRFU3704
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TA = 70°C TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max
20 ± 20 75 63 300 90 62 0.58 -55 to +175
Units
V
c
f f
A
Maximum Power Dissipation Maximum Power Dissipation
e e
W W/°C °C
Linear Derating Factor Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJC RθJA RθJA
Parameter
Junction-to-Case
g
Typ
Max
1.7 50 110
Units
°C/W
Junction-to-Ambient (PCB Mount) * Junction-to-Ambient
g
g
––– ––– –––
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes
through
are on page 9
www.irf.com
1
12/13/04
IRFR/U3704PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V (BR)DSS ∆V(BR)DSS/∆TJ RDS(on) V GS(th) IDSS IGSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Stati...
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