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IRFR3704PBF

International Rectifier

HEXFET Power MOSFET

PD - 95034A SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele...


International Rectifier

IRFR3704PBF

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PD - 95034A SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l l l IRFR3704PbF IRFU3704PbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.5mΩ ID 75A Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRFR3704 I-Pak IRFU3704 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TA = 70°C TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max 20 ± 20 75 63 300 90 62 0.58 -55 to +175 Units V c f f A Maximum Power Dissipation Maximum Power Dissipation e e W W/°C °C Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Symbol RθJC RθJA RθJA Parameter Junction-to-Case g Typ Max 1.7 50 110 Units °C/W Junction-to-Ambient (PCB Mount) * Junction-to-Ambient g g ––– ––– ––– * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through … are on page 9 www.irf.com 1 12/13/04 IRFR/U3704PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V (BR)DSS ∆V(BR)DSS/∆TJ RDS(on) V GS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Stati...




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