PD - 95194A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Thro...
PD - 95194A
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Lead-Free
C
IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF
VCES = 600V IC = 15A, TC=100°C
G E
tsc > 10µs, TJ=150°C
n-channel
VCE(on) typ. = 1.8V
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak
IRGS15B60KDPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
IRGB15B60KDPbF
TO-262
IRGSL15B60KDPbF
Max.
600 31 15 62 62 31 15 64 ± 20 208 83 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A
V W °C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient...