IRGSL8B60KPbF

PD - 95645A INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB D2Pak IRGB8B60KPbF IRGS8B60K TO-262 IRGSL8B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 28 19 Units V A c 56 56 ±20 167 83 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Storage Temperature Range, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA RθJA Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Min. ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 0.90 ––– 62 40 ––– Units °C/W d ––– Junction-to-Ambient (PCB Mount, Steady State) Weight e ––– ––– ––– g www.irf.com 1 11/18/04 IRGB/S/SL8B60KPbF Electrical Characteristics @ TJ = ...