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IRL620A

Advanced Power MOSFET

Description

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) IRL620A BVDSS = 200 V RDS(on) = 0.8Ω ID = 5 A TO-220 1 2 3 1.Gate 2. Drain 3. S...

Fairchild Semiconductor

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