POWER MOSFET
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PD -9.1218
IRL620S
HEXFET® Power MOSFET
Surface Mount Available in Tape & R...
Description
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PD -9.1218
IRL620S
HEXFET® Power MOSFET
Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface-mount application.
VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A
SMD-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C Continuous Drain Current, VGS @ 5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
5.2 3.3 21 50 3.1 0.40 0.025 ±10 125 5.2 5.0 5.0 -55 to + 150 300 (1.6mm from case)
Units
A
W W/°C V mJ A mJ V...
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