POWER MOSFET
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PD -9.1255
IRL630
HEXFET ® Power MOSFET
Dynamic dv/dt Rating Repetitive Ava...
Description
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PD -9.1255
IRL630
HEXFET ® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A
Absolute Maximum Ratings
Parameter
ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
9.0 5.7 36 74 0.59 ±10 250 9.0 7.4 5.0 -55 to + 150 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-...
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