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PD - 9.1092A
IRLI2203G
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.0V & 10V Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
VDSS = 30V RDS(on) = 0.010Ω ID = 52A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Collector Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
52 37 210 48 0.32 ±20 90 31 4.8 4.5 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient
Min.
–––– ––––
Typ.
–––– ––––
Max.
3.1 65
Units
°C/W
Revision 1
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IRLI2203G
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Min. 30 ––– ––– ––– 1.0 44 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.039 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 9.1 110 110 100 4.5 7.5
––– 3700 ––– 1700 ––– 310 ––– 12
Max. Units Conditions ––– V VGS = 0V, ID = 250µA, TJ >-40°C ––– V/°C Reference to 25°C, ID = 1mA 0.010 VGS = 10V, ID = 31A Ω 0.015 VGS = 5.0V, ID = 26A 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 55A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 VGS = 10V nA -100 VGS = -10V 85 ID= 46A, VDS= 24V, VGS= 5.0V 150 ID= 55A nC 23 VDS = 24V 36 VGS = 10V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 55A ns ––– RG = 5.0Ω ––– RD = 0.26Ω, See Fig. 10 Between lead, ––– 6mm (0.25in.) nH from package ––– and center of die contact ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– pF ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units ––– ––– ––– ––– 52 A 210 V ns µC
––– ––– 1.6 ––– 59 89 ––– 0.11 0.17
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 55A di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 20µH RG = 25Ω, IAS = 55A. (See Figure 12)
ISD ≤ 55A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, ƒ=60Hz
Caculated continuous current based on maximum allowable junction temperature; for recomended current-handling of the package refer to Design Tip # 93-4
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IRLI2203G
10000
VGS 10.00V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP
1000
I , Drain-to-Source Current (A) D
1000
I , Drain-to-Source Current (A) D
100
VGS 10.00V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP
100
10
10
2.25V
1
1
2.25V
0.1 0.1 1
20µs PULSE WIDTH Tc = 25°C A
10 1 00
0.1 0.1 1
20µs PULSE WIDTH TC = 175°C
10 100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typ.