Document
PD - 95221
IRLL024NPbF
HEXFET® Power MOSFET
Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
D
VDSS = 55V RDS(on) = 0.065Ω
G S
ID = 3.1A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
4.4 3.1 2.5 12 2.1 1.0 8.3 ± 16 120 3.1 0.1 5.0 -55 to + 150
Units
A
W W
mW/°C
V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90 50
Max.
120 60
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
04/27/04
IRLL024NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 55 ––– ––– ––– ––– 1.0 3.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.048 ––– ––– ––– ––– ––– ––– ––– ––– ––– 10.4 1.5 5.5 7.4 21 18 25 510 140 58
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.065 VGS = 10V, ID = 3.1A 0.080 Ω VGS = 5.0V, ID = 2.5A 0.100 VGS = 4.0V, ID = 1.6A 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 1.9 A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 125°C 100 VGS = 16V nA -100 VGS = -16V 15.6 ID = 1.9A 2.3 nC VDS = 44V 8.3 VGS = 5.0V, See Fig. 6 and 9 ––– VDD = 28V ––– ID = 1.9A ns ––– RG = 24 Ω ––– RD = 15 Ω, See Fig. 10 ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol ––– ––– 3.1 showing the A integral reverse ––– ––– 12 p-n junction diode. ––– ––– 1.0 V TJ = 25°C, IS = 1.9A, VGS = 0V ––– 39 58 ns TJ = 25°C, IF = 1.9A ––– 63 94 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 1.9A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L = 25 mH
RG = 25Ω, IAS = 3.1A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRLL024NPbF
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
10
10
2.7V
20µs PULSE WIDTH T = 150 C
J ° 1 10 100
2.7V
20µs PULSE WIDTH T = 25 C
J ° 1 10 100
1 0.1
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
ID = 3.1A
I D , Drain-to-Source Current (A)
TJ = 25 ° C TJ = 150 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.5
10
1.0
0.5
1 2 4 6
V DS = 25V 20µs PULSE WIDTH 8 10 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junc.