POWER MOSFET
PD - 95774B
IRLR2905ZPbF
IRLU2905ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistan...
Description
PD - 95774B
IRLR2905ZPbF
IRLU2905ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 13.5mΩ
ID = 42A
S
D-Pak
I-Pak
IRLR2905ZPbF IRLU2905ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθJA RθJA
j Parameter
Junction-to-Case
ij Junction-to-Ambient (PCB mount)...
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