POWER MOSFET
PD - 95956A
IRLR3705ZPbF
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operat...
Description
PD - 95956A
IRLR3705ZPbF
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
G
IRLU3705ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0mΩ
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
ID = 42A
S
Absolute Maximum Ratings
D-Pak
I-Pak
IRLR3705ZPbF IRLU3705ZPbF
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max. 89 63 42 360 130
Units A
W
Linear Derating Factor
VGS
d E AS (Thermally limited) h EAS (Tested ) Ã IAR g E AR
Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
0.88 ± 16 110 190 See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C V mJ
A mJ
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw...
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