IRLU7843CPBF

PD - 96058 IRLR7843CPbF IRLU7843CPbF Applications l l HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free VDSS 30V RDS(on) max 3.3m: Qg 34nC Benefits l l l Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR7843CPbF IRLU7843CPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 161 113 620 140 71 0.95 -55 to + 175 300 (1.6mm from case) Units V ™ f f A W W/°C °C Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 1.05 50 110 Units °C/W gà ––– ––– ––– Notes  through … are on page 11 www.irf.com 1 05/31/06 IRLR/U7843CPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Dra...