UMZ27N

UMZ27N Diodes Zener diode UMZ27N zApplications Voltage regulation (common anode configuration) zExternal dimensions (Unit : mm) zLand size figure 0.8MIN. 2.0±0.2 0.3±0.1 リードとも Each lead has same dimension (3) 0.9MIN. 1.25±0.1 2.1±0.1 zFeatures 1) Small mold type. (UMD3) 2) High reliability 0.15±0.05 1.3 UMD3 0～0.1 0.1Min zConstruction Silicon epitaxial planer (2) （0.65） （0.65） (1) 1.3±0.1 0.7±0.1 0.9±0.1 zStructure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 1.75±0.1 3.5±0.05 8.0±0.2 2.4±0.1 5.5±0.2 2.25±0.1 　　　　 0 4.0±0.1 φ0.5±0.05 0～0.1 2.4±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation (*1) P Junction temperature Tj Storage temperature Tstg Limits 200 150 -55 to +150 Unit mW ℃ ℃ (*1)Total of 2 elements zElectrical characteristic (Ta=25°C) Parameter Symbol VZ Zener voltage Min. 26.19 - Typ. - Max. 27.53 0.10 Unit V µA Conditions IZ=5mA VR=21V Reverse current IR Rev.A 1.6 0.65 1/2 UMZ27N Diodes zElectrical characteristic curves 10 Ta=-25℃ Ta=125℃ 1000 100 10 1 0.1 0.01 0.001 0.001 24 25 26 27 28 29 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 30 31 0.0001 0 5 10 15 20 25 1 0 5 10 15 20 25 Ta=-25℃ Ta=75℃ Ta=25℃ Ta=150℃ Ta=125℃ 100 f=1MHz REVERSE CURRENT:IR (nA) Ta=25℃ Ta=75℃ 0.1 Ta=150℃ 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) 1 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVER...