US5U29

US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm) TUMT5 2.0 1.3 0.65 0.65 0.85Max. 0.77 zFeatures 1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U29 zApplications Load switch, DC/DC conversion zPackaging specifications Package Type US5U29 Code Basic ordering unit (pieces) Taping TR 3000 zEquivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) 0.15Max. 0.2 1pin mark (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev.C 1/4 US5U29 Transistor zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Total power dissipation Range of Storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 VRM VR IF IFSM Tj PD Limits −20 ±12 ±1 ±4 −0.4 −4 150 0.7 25 20 0.7 3.0 150 0.5 1.0 −55 to +150 Unit V V A A A A °C W / ELEMENT V V A A °C W / ELEMENT W / TOTAL °C ∗2 ∗3 PD ∗3 Tstg ∗1 Pw≤10µs, Duty cycle...