US6K2

US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 2.0 1.3 0.85Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. (6) (5) (4) 0.2 0.65 0.65 0.77 1.7 0.2 (1) (2) (3) 2.1 0~0.1 0.17 0.3 zApplications Switching zPackaging specifications Package Type US6K2 Code Basic ordering unit (pieces) Taping TR 3000 ∗2 ∗1 Abbreviated symbol : K02 zInner circuit (6) (5) (4) ∗1 ∗2 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits 30 20 ±1.4 ±5.6 0.6 5.6 1.0 0.7 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT Rev.A 0.15Max. 1pin mark 1/3 US6K2 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source br...