HEXFET Power MOSFET
PD - 92547
IRF7343PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface ...
Description
PD - 92547
IRF7343PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-Ch VDSS 55V
P-Ch -55V
6 5
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
P-CHANNEL MOSFET
Top View
RDS(on) 0.050Ω 0.105Ω
SO-8
Absolute Maximum Ratings
Parameter
V DS ID @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltag...
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