IRF7416PBF

PD - 95137A l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF7416PbF HEXFET® Power MOSFET S 1 S 2 S 3 G 4 A 8 D 7 D 6 D 5 D Top View VDSS = -30V RDS(on) = 0.02Ω The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ -10V ID @ TA = 70°C IDM Continuous Drain Current, VGS @ -10V c Pulsed Drain Current PD @TA = 25°C Power Dissipation Linear Derating Factor VGS EAS dv/dt Gate-to-Source Voltage d Single Pulse Avalanche Energy e Peak Diode Recovery dv/dt TJ ...