IRF7425PBF

VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) -20 V 8.2 mΩ 13 87 nC -15 A IRF7425PbF HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7425PbF SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7425PbF IRF7425TRPbF Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambientƒ Max. -20 -15 -12 -60 2.5 1.6 20 ± 12 -55 to + 150 Max. 50 Units V A W mW/°C V °C Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRF7425PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshol...