LASER DIODE
PRELIMINARY DATASHEET
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s ...
Description
PRELIMINARY DATASHEET
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS
DESCRIPTION
NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hierarchy (SDH) system STM-1 (I-1, S-1.1, L-1.1), STM-4 (I-4, S-4.1, L-4.1), ITU-T recommendations. NX6306S Series
FEATURES
OPTICAL OUTPUT POWER: Po = 5.0 mW LOW THRESHOLD CURRENT: lth = 10 mA @ TC = 25°C HIGH SPEED: tr, tf = 0.5 ns MAX. 40% REDUCTION OF MOUNTING AREA: 5-pin SOP × 2 SIDE MODE SUPPRESSION RATIO: SWSR = 45 dB @ TYP. InGaAs MONITOR PIN-PD CAN PACKAGE: φ 5.6 mm BASED ON TELCORDIA RELIABILITY NX6306G Series
APPLICATIONS
156 Mb/s: STM-1 (I-1, S-1.1, L-1.1) 622 Mb/s: STM-4 (I-4, S-4.1, L-4.1) 1.25 Gb/s: Gigabit Ethernet
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
California Eastern Laboratories
1
NX6306 Series PACKAGE DIMENSIONS (UNIT: mm)
NX6306S Series
5.6 +0.00 -0.03 4.2±0.1 3.55±0.05
1.0±0.1
BOTTOM VIEW
1
0.3 +0.1 -0.0
110º±2º
2 3
4
0.3 +0.1 -0.0 0.25±0.03 (GLASS) 1.6±0.1 0.25 0.33 1.0 MIN. 15.0±1.0 1.2±0.1 2.1±0.15
PIN CONNECTIONS NX6306SH
1 (CASE) REFERENCE PLANE 2 PD 3 LD 4 2 PD 3
*1
NX6306SK
1 (CASE) LD 4
LD CHIP 1.27±0.05
4– 0.45 2.0 P.C.D
*1 n = 1.48 Bolosilicate Glass
NX...
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