DatasheetsPDF.com

NX6506

LASER DIODE

Description

NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES OPTICAL OUTPUT POWER: PO = 5.0 mW LOW THRESHOLD CURRENT: ITH = 10 mA DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A SIDE MODE SUPPRESSION RATIO: SMSR = 40 dB WIDE OPERATING TEMPERATURE RANGE: TC = -20 to +85°C InGaAs MONITOR PIN-PD CA...

CEL

Download NX6506 Datasheet

Similar Datasheet

NX6504 LASER DIODE - CEL
NX6506 LASER DIODE - CEL
NX6508 LASER DIODE - CEL
NX6509 LASER DIODE - CEL
NX6514EH LASER DIODE - California Eastern Labs

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)