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NX7361JB-BC

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LASER DIODE

Description
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) FEATURES HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% LONG WAVELENGTH: λC = 1310 nm INTERNAL THERMOELECTRIC COOLER, THERMISTOR HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE SINGLE MODE FIBER PIGTAIL NX7361JB-BC DESCRIPTION N...


CEL

NX7361JB-BC

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