LASER DIODE
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION (135 mW MIN)
FEATURES
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Description
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION (135 mW MIN)
FEATURES
HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% LONG WAVELENGTH: λC = 1550 nm INTERNAL THERMOELECTRIC COOLER HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE SINGLE MODE FIBER PIGTAIL
DESCRIPTION
NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment (OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)
PART NUMBER SYMBOLS VFP ITH Pf PARAMETERS AND CONDITIONS Forward Voltage, CW, IF = 30 mA Threshold Current, CW Optical Output Power from Fiber IFP = 1000 IFP = 600 mA1 IFP = 400 mA1 Center Wavelength, RMS, IFP = 400, 600, 1000 mA1 Spectral Width, RMS, IFP = 400, 600, 1000 mA1 Rise Time, 10-90% Fall Time, 90-10% mA1 UNITS V mA mW mW mW nm nm ns ns 135 70 20 1530 MIN NX7561JB-BC TYP 2.5 40 MAX 4.0 70
λC σ tr tf
1550 6.0 1.0 1.4
1570 10.0 2.0 2.0
Note: 1. PW = 10 µs, Duty = 1%
ELECTRO-OPTICAL CHARACTERISTICS APPLICABLE TO THERMISTOR AND TEC: (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)
PART NUMBER SYMBOLS R1 B IC VC ∆T1 PARAMETERS AND CONDITIONS Thermistor Resistance, TLD = 25°C B Constant Cooler Current, ∆T = 40 K Cooler Voltage, ∆T = 40 K Cooling Capacity, IC ...
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