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STP30NE06L Dataheets PDF



Part Number STP30NE06L
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet STP30NE06L DatasheetSTP30NE06L Datasheet (PDF)

® STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP30NE06L STP30NE06LF P s s s s V DSS 60 V 60 V R DS( on ) < 0.05 Ω < 0.05 Ω ID 30 A 17 A TYPICAL RDS(on) = 0.035 Ω 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing d.

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® STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP30NE06L STP30NE06LF P s s s s V DSS 60 V 60 V R DS( on ) < 0.05 Ω < 0.05 Ω ID 30 A 17 A TYPICAL RDS(on) = 0.035 Ω 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. www.DataSheet4U.com TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value ST P30NE06L V DS V DGR V GS ID ID I DM ( • ) P tot V ISO T s tg Tj March 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o o o Unit STP30NE06L FP 60 60 ± 20 V V V 17 12 68 30 0.2 2000 A A A W W/ oC V o o 30 21 120 80 0.53  -65 to 175 175 C C 1/9 (•) Pulse width limited by safe operating area STP30NE06L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.875 62.5 0.5 300 TO-220FP 5 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 20 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 5 V V GS = 10 V Test Con ditions ID = 250 µ A I D = 15 A ID = 15 A 30 Min. 1 Typ. 1.75 0.045 0.035 Max. 2.5 0.06 0.05 Unit V Ω Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =15 A V GS = 0 Min. 10 Typ. 18 1350 195 58 Max. Unit S pF pF pF 2/9 STP30NE06L/FP ELECTRICAL CHARACTERISTIC.


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