FQH90N15

FQH90N15 / FQA90N15 N-Channel Power MOSFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V Low gate charge (typical 220 nC) Low Crss (typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating QFET Description October 2006 ® These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. { z D G { G D S   z z TO-247 FQH Series TO-3P G DS FQA Series { S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQH90N15/FQA90N15 150 90 63.5 360 ±25 1400 90 37.5 6.0 375 2.5 -55 to +175 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating...