Document
DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity: IC(DC): −10 A, IC(pulse): −15 A • High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A)
QUALITY GRADES
• Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
www.DataSheet4U.com
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C)** PT (Tc = 25°C) Tj Tstg Ratings −30 −20 −10 −10 −15 −0.5 1.0 15 150 −55 to +150 Unit V V V A A A W W °C °C
* PW ≤ 10 ms, duty cycle ≤ 50% ** Printing board mounted
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16119EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan
©
2002
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacity Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1* hFE2* VCE(sat)* VBE(sat)* fT Cob ton tstg tf Conditions VCB = −20 V, IE = 0 VEB = −8.0 V, IC = 0 VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −4.0 A IC = −4.0 A, IB = −0.05 A IC = −4.0 A, IB = −0.05 A VCE = −5.0 V, IE = 1.5 A VCB = −10 V, IE = 0, f = 1.0 MHz IC = −5.0 A, IB1 = −IB2 = 0.125 A, RL = 2.0 Ω, VCC ≅ −10 V 200 160 −0.2 −0.9 180 220 80 300 60 −0.25 −1.2 V V MHz pF ns ns ns MIN. TYP. MAX. −1.0 −1.0 600 Unit
µA µA
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking hFE2 L 200 to 400 K 300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615 2SA1615-Z
Electrode Connection 1. Base 2. Collector 3. Emitter 4. Collector (fin)
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Data Sheet D16119EJ1V0DS
2SA1615, 1615-Z
TYPICAL CHARACTERISTICS (Ta = 25 °C)
Total Power Dissipation PT (W)
IC Derating dT (%)
Case Temperature TC (°C)
Case Temperature TC (°C)
Collector Current IC (A)
Single pulse
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector to Emitter Voltage VCE (V)
–15
Collector Current IC (A)
–10
–5
Base to Emitter Voltage VBE (V)
DC Current Gain hFE
Collector Current IC (A)
Data Sheet D16119EJ1V0DS
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2SA1615, 1615-Z
Collector Saturation Voltage VCE(sat) (V)
Collector Current IC (A)
Base Saturation Voltage VBE(sat) (V)
Collector Current IC (A)
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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Data Sheet D16119EJ1V0DS
2SA1615, 1615-Z
[MEMO]
Data Sheet D16119EJ1V0DS
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2SA1615, 1615-Z
• The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endea.