2SA1615-Z

DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES Large current capacity: IC(DC): −10 A, IC(pulse): −15 A High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A) QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC www.DataSheet4U.com Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C)** PT (Tc = 25°C) Tj Tstg Ratings −30 −20 −10 −10 −15 −0.5 1.0 15 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ** Printing board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with ...