40N03P SSM40N03P Datasheet

40N03P Datasheet, PDF, Equivalent


Part Number

40N03P

Description

SSM40N03P

Manufacture

Silicon Standard

Total Page 6 Pages
Datasheet
Download 40N03P Datasheet


40N03P
SSM40N03P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate charge
Simple drive requirement
Fast switching
Description
G
DS
TO-220
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial and
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits.
BVDSS
R DS(ON)
ID
G
30V
17m
40A
D
S
Absolute Maximum Ratings
Symbol
Parameter
Vwww.DataSheet4U.com
DS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
± 20
40
30
169
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
2.5
62
Unit
°C/W
°C/W
Rev.2.01 7/01/2004
www.SiliconStandard.com
1 of 6

40N03P
SSM40N03P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BV DSS/Tj
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
30 - - V
- 0.037 - V/°C
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=20A
- 14 17 m
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
www.DataSheet4U.com
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=30V, VGS=0V
VDS=24V,VGS=0V
VGS= ± 20V
ID=20A
VDS=24V
VGS=5V
VDS=15V
ID=20A
RG=3.3,VGS=10V
RD=0.75
VGS=0V
VDS=25V
f=1.0MHz
- 20 23 m
1 - 3V
- 26 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 17 - nC
- 3 - nC
- 10 - nC
- 7.2 - ns
- 60 - ns
- 22.5 - ns
- 10 - ns
- 800 - pF
- 380 - pF
- 133 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C, IS=40A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Min. Typ. Max. Units
- - 40 A
- - 169 A
- - 1.3 V
Rev.2.01 7/01/2004
www.SiliconStandard.com
2 of 6


Features SSM40N03P N-CHANNEL ENHANCEMENT-MODE POW ER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDS S R DS(ON) ID TO-220 30V 17mΩ 40A D escription Power MOSFETs from Silicon S tandard provide the designer with the b est combination of fast switching, rugg edized device design, low on-resistance and cost-effectiveness. The TO-220 pac kage is widely preferred for commercial and industrial applications and suited for low voltage applications such as D C/DC converters and high efficiency swi tching circuits. D G S Absolute Maxi mum Ratings Symbol www.DataSheet4U.com Parameter Drain-Source Voltage Gate-So urce Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 3 0 ± 20 40 30 169 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C ° C VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C TSTG TJ Total Power Dissipation Linear Derating Factor Sto rage Temperature Range Operating Junction Temperature Range Thermal Dat.
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