AO4801A

AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4801A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications) Features VDS (V) = -30V ID =-5.6A (VGS = 10V) RDS(ON) < 42mΩ (VGS = 10V) RDS(ON) < 52mΩ (VGS = 4.5V) RDS(ON) < 75mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 G1 S1 G2 S2 www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current B B Steady State Units V -30 ±12 4.2 3.4 -30 11 18 TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25°C 5.6 4.5 A Repetitive avalanche energy L=0.3mH B Power Dissipation TA=70°C mJ 1.1 0.7 W °C 2.0 1.3 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4801A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) ...