AO4802L

Rev 2: Nov 2004 AO4802, AO4802L ( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 7A RDS(ON) < 26m Ω (VGS = 10V) RDS(ON) < 30m Ω (VGS = 4.5V) RDS(ON) < 40m Ω (VGS = 2.5V) RDS(ON) < 70m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.DataSheet4U.com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±12 7 6 40 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4802, AO4802L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250 µA VGS=4.5V, V DS=5V VGS=10V...