AO4806

AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications). AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical. D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 Features VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14m Ω (VGS = 10V) RDS(ON) < 15m Ω (VGS = 4.5V) RDS(ON) < 21m Ω (VGS = 2.5V) RDS(ON) < 30m Ω (VGS = 1.8V) ESD Rating: 2000V HBM D2 www.DataSheet4U.com G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 20 ±12 9.4 7.5 40 2 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 45 72 34 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4806 Electrical Characteristics (TJ=25°C unless other...