TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/323 Devices 2N3250A 2N3251A Qualified Level ...
TECHNICAL DATA
PNP SILICON SWITCHING
TRANSISTOR
Qualified per MIL-PRF-19500/323 Devices 2N3250A 2N3251A Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IC PT TJ, Tstg Symbol
(1)(2) RθJA
Value
60 60 5.0 200 0.36 1.2 -65 to +175 Max. 417
Units
Vdc Vdc Vdc mAdc W W 0 C Unit C/W
www.DataSheet4U.com
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Ambient 1) Derate linearly 2.4 W/0C for TA > +250C 2) Derate linearly 8.0 W/0C for TC > +250C
0
TO-39* (TO-205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 40 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc V(BR)CEO ICEX ICBO IEBO ICEX 60 20 10 20 10 50 Vdc ηAdc µAdc ηAdc µAdc ηAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N3250A, 2N3251A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 0.1 mAdc, V...