TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JA...
TECHNICAL DATA
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
www.DataSheet4U.com
Symbol
VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC
0
Value
80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88
Units
Vdc Vdc Vdc Adc W
0
Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > 25 C 2) Derate linearly 331 mW/0C for TC > 250C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%
0
Unit 0 C/W
0
TO-59*
RθJA
C/W
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICEO ICES Min. 80 50 1.0 1.0 1.0 1.0 Max. Unit Vdc µAdc µAdc mAdc mAdc mAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 Vdc, IC = 0 VBE = 5.5 Vdc, IC = 0
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N5002, 2N5004 JAN SERIES ELECTRICAL CHARACTERISTICS (Con’t)
Characteristics Symbol Min. Max....