2N5031 TRANSISTORS Datasheet

2N5031 Datasheet, PDF, Equivalent


Part Number

2N5031

Description

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacture

Advanced Power Technology

Total Page 4 Pages
Datasheet
Download 2N5031 Datasheet


2N5031
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Silicon NPN, To-72 packaged VHF/UHF Transistor
1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
2N5031
2
13
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Thewww.DataSheet4U.com 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver,
applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 25º C
Derate above 25º C
Value
10
15
3.0
20
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

2N5031
2N5031
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 0.01 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 0.01mAdc, IC = 0)
Collector Cutoff Current
(VCE = 6.0 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc)
Min.
10
15
3.0
-
Value
Typ.
-
-
-
1.0
Max.
-
-
-
10
Unit
Vdc
Vdc
Vdc
nA
25 - 300
-
DYNAMIC
Symbol
fT
CCB
Test Conditions
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
Output Capacitance
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
Min.
1200
-
Value
Typ.
-
2.5
Max.
2500
-
FUNCTIONAL
Symbol
G
U max
MAG
Test Conditions
Maximum Unilateral Gain (1) IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
Maximum Available Gain
IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
Min.
-
-
Value
Typ.
12
12.4
Max.
-
-
Unit
MHz
dB
Unit
dB
dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.


Features 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 2N5031 RF & MICROWAVE DIS CRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Uni lateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collecto r 4. Case TO-72 DESCRIPTION: www.Data Sheet4U.com The 2N5031 is a silicon NP N transistor, designed for general purp ose small-signal, pre-driver, and drive r, applications targeted for military a nd industrial equipment. ABSOLUTE MAXI MUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitt er Voltage Collector-Base Voltage Emitt er-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Ther mal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1. 14 mWatts mW/ º C Advanced Power Tech nology reserves the right to change, wi thout notice, the specifications and information contained herein Visit our.
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