140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5031
RF & MICROWAVE DISCR...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5031
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
Silicon
NPN, To-72 packaged VHF/UHF
Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
1 4 2 3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
www.DataSheet4U.com
The 2N5031 is a silicon
NPN transistor, designed for general purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N5031
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) Value Min. 10 15 3.0 Typ. 1.0 Max. 10 Unit Vdc Vdc Vdc nA
(on)
HFE DC Current Gain (IC = 1.0 mAdc, VC...