140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5179
RF & MICROWAVE DISCR...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5179
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
Silicon
NPN, TO-72 packaged VHF/UHF
Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters
2 1 4 3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
www.DataSheet4U.com
The 2N5179 is a Silicon
NPN transistor, designed for VHF and UHF equipment. It is ideal for pre-driver, low noise amplifier, and oscillator applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C)
Symbol
VCEO VCBO VEBO IC
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Value
12 20 2.5 50
Unit
Vdc Vdc Vdc mA
Thermal Data
PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC 300 1.71 mW mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N5179
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC (off)
Symbol
BVCEO BVCBO BVEBO ICBO
Test Conditions
Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 Adc, IE=0) Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
Value
Min. Typ. Max.
Unit
12 20 2.5 -
-
.02
Vdc Vdc Vdc mA
(on)
HFE VBE(sat) VCE...