TECHNICAL DATA
PNP POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/582 Devices 2N5679 2N5680 Qualified Le...
TECHNICAL DATA
PNP POWER
TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/582 Devices 2N5679 2N5680 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS (TA = 250C unless otherwise noted) Ratings Symbol 2N5679
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC
2N5680
Unit
Vdc Vdc Vdc Adc Adc W W °C Unit 0 C
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@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range
100 120 100 120 4.0 4.0 1.0 1.0 0.5 0.5 1.0 1.0 10 10 -65 to +200 -65 to +200 Max. 17.5
TO-39* (TO-205AD)
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 57 mW/0C for TC > +250C
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. 100 120 1.0 10 Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc 2N5679 2N5680 Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Emitter Cutoff Current VCE = 70 Vdc 2N5679 VCE = 80 Vdc 2N5680 Collector-Emitter Cutoff Current VBE = 1.5 Vdc VCE = 100 Vdc 2N5679 VCE = 120 Vdc 2N5680
V(BR)CEO
Vdc µAdc µAdc
IEBO ICEO
ICEX
100
nAdc
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2N5679, 2N5680 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Un...