2N6193 SILICON TRANSISTOR Datasheet

2N6193 Datasheet, PDF, Equivalent


Part Number

2N6193

Description

PNP MEDIUM POWER SILICON TRANSISTOR

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download 2N6193 Datasheet


2N6193
TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices
2N6193
Qualified Level
JAN, JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71mW/0C for TA > +250C
2) Derate linearly 57.1mW/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
Top, Tstg
Symbol
RθJC
2N6193
100
100
6.0
5.0
1.0
1.0
10
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Max.
17.5
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IC = 50 mAdc
VCEO(sus)
Collector-Emitter Cutoff Current
VCE = 100 Vdc
ICEO
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
Collector-Emitter Cutoff Current
VCE = 90 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
ICEX
ICBO
Min.
100
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
100 µAdc
100 µAdc
10 µAdc
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N6193
2N6193 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
DC Current Gain
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
Base-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Output Capacitance
VBE = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = -40 Vdc, VBE(off) = 3.0 Vdc
IC = 2.0 Adc, IB1= 0.2 Adc
VCC = -40 Vdc IC = 2.0 Adc,
IB1 = -IB2 = 0.2 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t 0.5 s
Test 1
VCE = 2.0 Vdc, IC = 5.0 Adc
Test 2
VCE = 90 Vdc, IC = 55 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Cibo
td
tr
ts
tf
Min. Max. Unit
60
60 240
40
0.7 Vdc
1.2
1.2 Vdc
1.8
3.0 15
300
1250
100
100
2.0
200
pF
pF
ηs
ηs
µs
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Features TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 561 Devices 2N6193 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Bas e Voltage Emitter-Base Voltage Collecto r Current Base Current Total Power Diss ipation Symbol VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 2N6193 100 100 6.0 5.0 1.0 1.0 10 -65 to +200 Max. 17 .5 Units Vdc Vdc Vdc Adc Adc W W 0 C U nit C/W www.DataSheet4U.com @ TA = +2 50C(1) @ TC = +250C(2) Operating & Stor age Temperature Range THERMAL CHARACTE RISTICS Characteristics Thermal Resista nce, Junction-to-Case 1) Derate linearl y 5.71mW/0C for TA > +250C 2) Derate li nearly 57.1mW/0C for TC > +250C 0 TO-3 9* (TO-205AD) *See appendix A for pack age outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Cha racteristics Symbol VCEO(sus) ICEO IEBO ICEX ICBO Min. 100 100 100 10 10 Max. Unit Vdc µAdc µAdc µAdc µAdc OFF C HARACTERISTICS Collector-Emitter Sustaining Voltage IC = 50 mAdc Col.
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